Multiband 3G/LTEhandsets
WCDMA Bands I, II, III, IV, V, VIII, IX
TD-SCDMA Bands 34,39
FDD LTE Bands
1,2,3,4,5,7,8,9,12,13, 17,19,20,25,26,28, 30,66,71TDD LTE Bands 34,38,39,40,41
C2K Bands BC0,1,4, 6,10,15
Two T/R (RX) ports and 14 outputs
Industry-leading PAE for 3G/4G
Optimized for APT DCDC operation
ully programmable Mobile Industry Processor Interface (MIPI) control
MIPI programmable bias modes optimize best efficiency / linearity trade-off for
3G and 4G; minimizes DG09 for 3G.
Small, low profile
package:
- 4.0 x 6.8 x 0.8 mm Max.
- 42-pad configuration
Description
NV7643-31 is a multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G / 4G handsets and operates efficiently in WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI®).
The PAM consists of a WCDMA / LTE block for low, high, and mid-bands, and a Multi-Function Control (MFC) block, RF input/output ports internally matched to 50 Ω to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time.
NV7643-31 is a multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G / 4G handsets and operates efficiently in WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI®).
The PAM consists of a WCDMA / LTE block for low, high, and mid-bands, and a Multi-Function Control (MFC) block, RF input/output ports internally matched to 50 Ω to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time.